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TPCS8007-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS)
TPCS8007-H
High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
Unit: mm
* * * *
Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 200 200 20 1.9 7.6 1.5 W 0.6 2.3 1.9 0.15 150 -55~150 mJ A mJ C C Unit V V V A
1.2.3. Source 4 Gate 5.6.7.8 Drain
JEDEC JEITA TOSHIBA
2-3R1F
Weight: 0.036 g (typ.)
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy(Note3) Avalanche current Repetitive avalanche energy (Note2a, Note 4) Channel temperature Storage temperature range
Circuit Configuration
8 7 6 5
Note: For Notes 1 to 4, refer to the next page.
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCS8007-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit C/W C/W
Marking (Note 5)
Part No. (or abbreviation code)
S8007
*
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use.
Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 1.9 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on the lower right of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCS8007-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Symbol IGSS IDSS V (BR) DSS Drain-source breakdown voltage V (BR) DSX V (BR) DSX Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs Qgd Qsw VDD 160V, VGS = 10 V, - ID = 1.9 A Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton ID = 0.9 A VOUT RL = 111 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -5 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.9 A VDS = 10 V, ID = 0.9 A Min 200 200 150 2.0 0.9 Typ. 0.36 2.1 600 20 220 35 95 20 120 10 7.5 2.5 3.3 Max 10 100 4.0 0.45 ns nC nC nC nC V S pF pF pF V Unit A A
10 V 0V
VDD 100 V - Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current (pulse) Forward voltage (diode) (Note 1) Symbol IDRP VDSF Test Condition IDR = 1.9 A, VGS = 0 V Min Typ. Max 7.6 -2.0 Unit A V
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TPCS8007-H
ID - VDS
3 Common source Ta = 25C Pulse test 6 2 5.5 4.6 4.5 4.4 1 4.2 VGS = 4 V 0 0 10 8 4.8 4 5.2 5 Common source 10 Ta = 25C Pulse test 8 6 3
ID - VDS
5.5 5.2
(A)
(A)
5
ID
Drain current
Drain current
ID
4.8 2 4.6 4.4 1 4.2 VGS = 4 V 0 1 2 3 4 5
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
5 Common source VDS = 10 V Pulse test 2.0
VDS - VGS
Common source Ta = 25C Pulse test
4
(V)
1.6
(A)
ID
100 2 25 1 Ta = -55C
Drain-source voltage
3
VDS
1.2 0.8
Drain current
ID = 1.9 A
0.4
0.9 0.5
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
100 Common source VDS = 10 V Pulse test
RDS (ON) - ID
10 Common source Ta = 25C Pulse test
Forward transfer admittance
10 Ta = -55C 100 1 25
Drain-source ON-resistance RDS (ON) ()
|Yfs|
1
VGS = 10 V
0.1 0.1
1
10
100
0.1 0.1
1
10
Drain current
ID
(A)
Drain current
ID
(A)
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TPCS8007-H
RDS (ON) - Ta
1 Common source VGS = 10 V Pulse test 10 Common source Ta = 25C Pulse test
IDR - VDS (A)
Drain-source ON-resistance RDS (ON) ()
0.8
0.6
ID = 1.9 A 0.5
0.9
Drain reverse current
IDR
1
10 5 3
0.4
0.2
1 0.1 0 -0.2 -0.4 -0.6
VGS = 0 V -0.8 -1.0
0 -80
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
1000 Ciss 4
Vth - Ta Vth (V)
Common source VDS = 10 V ID = 1mA Pulse test
(pF)
3
Gate threshold voltage
100
Capacitance
C
Coss
2
10 Common source VGS = 0 V f = 1 MHz 1 0.1 Ta = 25C 1 10
Crss
1
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2.0 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 10s 250
Dynamic input/output characteristics
Common source ID = 1.9 A Ta = 25C Pulse test VDS 150 40 100 80 12 VDS = 160 V 8 20
(W)
(V)
Drain power dissipation
VDS
0.8 (2) 0.4
Drain-source voltage
1.2
50
VGS
4
0 0
40
80
120
160
200
0 0
5
10
0 15
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
VGS
PD
1.6
(1)
200
16
(V)
TPCS8007-H
rth - tw
500 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (2)
Transient thermal impedance rth (C/W)
(1)
10
1
0.1 0.001
Single - pulse 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100
(A)
10 ID max (pulse) * t =1 ms *
Drain current
ID
10 ms * 1 *Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 10 100
VDSS max 1000
Drain-source voltage
VDS
(V)
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TPCS8007-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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